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參數(shù)資料
| 型號(hào)： | 2N3767 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2N3767 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
2N3766, 2N3767 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 500 mAdc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
hFE
30
40
20
160
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 0.5 Adc, IB = 0.05 Adc
VCE(sat)
2.5
1.0
Vdc
Base-Emitter Voltage
IC = 1.0 Adc, VCE = 10 Vdc
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz
h
fe
1.0
8.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz
Cobo
50
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc
ton
0.25
s
Turn-Off Time
VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc
toff
2.5
s
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.25 Vdc, IC = 4.0 Adc
Test 2
VCE = 20 Vdc, IC = 1.25 Adc
Test 3
VCE = 50 Vdc, IC = 150 mAdc
2N3766
VCE = 65 Vdc, IC = 150 mAdc
2N3767
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
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| 2N3767JANTXV | 制造商:Microsemi Corporation 功能描述: |
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