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參數(shù)資料
| 型號： | 2N3634UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N3634UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452)
Page 4 of 5
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2.
Millimeters are given for general information only.
3.
Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4.
TL measured from maximum HD.
5.
CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6.
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by gauge and gauging procedure.
7.
LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8.
r (radius) applies to both inside corners of tab.
9.
For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10.
For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum (TO-5).
11.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1: Physical dimensions (TO-5 and TO-39)
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TYP
5.08 TYP
7
LD
.016
.021
0.41
0.53
6
LL
See notes 7, 9, and 10
LU
.016
.019
0.41
0.48
7
L1
050
1.27
7
L2
.250
6.35
7
P
.100
2.54
5
Q
.050
1.27
r
.010
0.254
8
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
α
45° TP
6
Term 1
Emitter
Term 2
Base
Term 3
Collector
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| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3635JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3635JV | 制造商:Motorola 功能描述:2N3635 MOT'88 N10D9H |
| 2N3635L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3635LJTXV | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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