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參數(shù)資料
| 型號： | 2N3634UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N3634UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452)
Page 2 of 5
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636
25
45
50
30
150
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3635, 2N3637
55
90
100
60
300
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.3
0.6
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.65
0.8
0.9
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio
|hfe|
IC = 30mAdc, VCE = 30Vdc, f = 100MHz
2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
hfe
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
Small-Signal Short-Circuit Input Impedance
hie
Ω
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
Small-Signal Open-Circuit Input Impedance
hoe
200
μs
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
Output Capacitance
Cobo
10
pF
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
75
pF
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Noise Figure
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
dB
(1) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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