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參數(shù)資料
| 型號： | 2N3055A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon High-Power Transistor(15A,60V（集電極-發(fā)射極）,115W，補償型，硅NPN大功率晶體管) |
| 中文描述： | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2N3055A |
2N3055A (NPN) MJ15015, MJ15016 (PNP)
http://onsemi.com
5
COLLECTOR CUTOFF REGION
10,000
+0.2
Figure 10. 2N3055A, MJ15015
V
BE
, BASEEMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
,
I
μ
0.1
0.01
+0.1
0
0.1
0.2
0.3
0.4
0.5
V
CE
= 30 V
T
J
= 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
I
C
= I
CES
NPN
1000
0.2
Figure 11. MJ15016
V
BE
, BASEEMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
,
I
μ
0.01
0.001
0.1
0
+0.1
+0.2
+0.3
V
CE
= 30 V
T
J
= 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
I
C
= I
CES
PNP
+0.4
+0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5
1
10
20
100
60
2
I
dc
30 s
1 ms
100 s
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
0.215
20
100
60
2.0
I
dc
0.1ms
100ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30
120
1.0ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on T
C
= 25 C;
T
J(pk)
is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
Package
Shipping
2N3055A
TO204
100 Units / Tray
2N3055AG
TO204
(PbFree)
MJ15015
TO204
100 Units / Tray
MJ15015G
TO204
(PbFree)
MJ15016
TO204
MJ15016G
TO204
(PbFree)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3055A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistor |
| 2N3055A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon High-Power Transistors |
| 2N3055AG | 功能描述:兩極晶體管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3055C | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N SILICON POWER TRANSISTOR |
| 2N3055E | 制造商:TT Electronics / Semelab 功能描述:NPN power transistor,15A 2N3055E |
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