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參數(shù)資料
| 型號(hào)： | 2N3055A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon High-Power Transistor(15A,60V（集電極-發(fā)射極）,115W，補(bǔ)償型，硅NPN大功率晶體管) |
| 中文描述： | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 89K |
| 代理商： | 2N3055A |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 5
1
Publication Order Number:
2N3055A/D
2N3055A (NPN)
MJ15015, MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
HighPower Transistors
These PowerBase complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dctodc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
CurrentGain BandwidthProduct @ I
C
= 1.0 Adc
f
T
= 0.8 MHz (Min) NPN
= 2.2 MHz (Min) PNP
Safe Operating Area Rated to 60 V and 120 V, Respectively
PbFree Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
2N3055A
MJ15015, MJ15016
V
CEO
60
120
Vdc
CollectorBase Voltage
2N3055A
MJ15015, MJ15016
V
CBO
100
200
Vdc
CollectorEmitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
V
CEV
100
200
Vdc
EmitterBase Voltage
V
EBO
7.0
Vdc
Collector Current Continuous
I
C
15
Adc
Base Current
I
B
7.0
Adc
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
2N3055A
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
MJ15015, MJ15016
P
D
115
0.65
180
1.03
W
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
1.52
0.98
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS 115, 180 WATTS
http://onsemi.com
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
TO204AA (TO3)
CASE 107
STYLE 1
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
= PbFree Package
= Assembly Location
= Year
= Work Week
= Country of Origin
G
A
Y
WW
MEX
Preferred
devices are recommended choices for future use
and best overall value.
MJ1501xG
AYWW
MEX
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3055 | Complementary Silicon Power Transistor(補(bǔ)償型硅功率晶體管) |
| 2N3091 | 110 AMP RMS SCRS |
| 2N3092 | 110 AMP RMS SCRS |
| 2N3093 | 110 AMP RMS SCRS |
| 2N3094 | 110 AMP RMS SCRS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3055A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistor |
| 2N3055A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon High-Power Transistors |
| 2N3055AG | 功能描述:兩極晶體管 - BJT 15A 60V 115W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3055C | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:N-P-N SILICON POWER TRANSISTOR |
| 2N3055E | 制造商:TT Electronics / Semelab 功能描述:NPN power transistor,15A 2N3055E |
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