參數(shù)資料
型號(hào): 2N3055
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Power Transistor(補(bǔ)償型硅功率晶體管)
中文描述: 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 70K
代理商: 2N3055
2N3055(NPN), MJ2955(PNP)
http://onsemi.com
3
V
V
500
0.1
Figure 3. DC Current Gain, 2N3055 (NPN)
I
C
, COLLECTOR CURRENT (AMP)
5.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
10
100
50
30
20
200
70
h
T
J
= 150
°
C
25
°
C
55
°
C
V
CE
= 4.0 V
200
0.1
I
C
, COLLECTOR CURRENT (AMP)
10
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
10
70
30
20
100
50
h
T
J
= 150
°
C
25
°
C
55
°
C
V
CE
= 4.0 V
7.0
10
300
7.0
7.0
Figure 4. DC Current Gain, MJ2955 (PNP)
2.0
5.0
I
B
, BASE CURRENT (mA)
0
10
20
50
100
200
500
1000 2000
5000
1.6
1.2
0.8
0.4
I
C
= 1.0 A
T
J
= 25
°
C
4.0 A
8.0 A
2.0
I
B
, BASE CURRENT (mA)
0
1.6
1.2
0.8
0.4
1.4
0.1
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 7. “On” Voltages, 2N3055 (NPN)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
10
1.0
0.6
0.4
0.2
0
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
Figure 5. Collector Saturation Region,
2N3055 (NPN)
1.2
0.8
7.0
V
BE
@ V
CE
= 4.0 V
2.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltages, MJ2955 (PNP)
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
1.2
0.4
0
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
1.6
0.8
V
BE
@ V
CE
= 4.0 V
5.0
10
20
50
100
200
500
1000 2000
5000
I
C
= 1.0 A
T
J
= 25
°
C
4.0 A
8.0 A
Figure 6. Collector Saturation Region,
MJ2955 (PNP)
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