參數(shù)資料
型號: 2N3055
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Power Transistor(補償型硅功率晶體管)
中文描述: 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 70K
代理商: 2N3055
2N3055(NPN), MJ2955(PNP)
http://onsemi.com
2
OFF CHARACTERISTICS
*
Thermal Resistance, JunctiontoCase
(T
C
= 25 C unless otherwise noted)
R
1.52
C/W
CollectorEmitter Sustaining Voltage (Note 1) (I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
60
Vdc
CollectorEmitter Sustaining Voltage (Note 1) (I
C
= 200 mAdc, R
BE
= 100 )
V
CER(sus)
70
Vdc
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
Collector Cutoff Current (V
= 30 Vdc, I
= 0)
I
0.7
mAdc
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc)
1.0
h
FE
20
5.0
70
CollectorEmitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 400 mAdc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
V
CE(sat)
1.1
3.0
Vdc
*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
s/b
C
CE
fe
kHz
*SmallSignal Current Gain Cutoff Frequency (V
CE
= 4.0 Vdc, I
C
= 1.0 Adc, f = 1.0 kHz)
f
hfe
10
20
6
Figure 2. Active Region Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
I
dc
500 s
1 ms
250 s
50 s
BONDING WIRE LIMIT
THERMALLY LIMITED @ T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25
°
C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
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