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參數(shù)資料
| 型號： | 2N2N2222AUB |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2N2N2222AUB |
Due to the limitations of probe testing, only dc parameters are tested. This must be done with
pulse width less than 300 μs, duty cycle less than 2%.
Parameter
Test conditions
Min
Max
Unit
I
CBO1
V
CB
= 75 V dc
---
10
μA dc
I
EBO1
V
EB
= 6 V dc
---
10
μA dc
V
(BR)CEO
Bias condition D; I
C
= 10 mA dc; pulsed
50
---
V dc
I
CES
Bias condition C; V
CE
= 50 V dc
---
50
nA dc
I
CBO2
Bias condition D; V
CB
= 60 V dc
---
10
nA dc
I
EBO2
Bias condition D; V
EB
= 4 V dc
---
10
nA dc
h
FE1
V
CE
= 10 V dc; I
C
= 0.1 mA dc
50
---
---
h
FE2
V
CE
= 10 V dc; I
C
= 1.0 mA dc
75
325
---
h
FE3
V
CE
= 10 V dc; I
C
= 10 mA dc
100
---
---
h
FE4
V
CE
= 10 V dc; I
C
= 150 mA dc; pulsed
100
300
---
h
FE5
V
CE
= 10 V dc; I
C
= 500 mA dc; pulsed
30
---
---
V
CE(sat)1
I
C
= 150 mA dc; I
B
= 15 mA dc; pulsed
---
0.3
V dc
V
CE(sat)2
I
C
= 500 mA dc; I
B
= 50 mA dc; pulsed
---
1.0
V dc
V
BE(sat)1
Test condition A; I
C
= 150 mA dc; I
B
= 15 mA
dc; pulsed
0.6
1.2
V dc
V
BE(sat)2
Test condition A; I
C
= 500 mA dc; I
B
= 50 mA
dc; pulsed
---
2.0
V dc
I
CBO3
Bias condition D; V
CB
= 60 V dc
---
10
μA dc
h
FE6
V
CE
= 10 V dc; I
C
= mA dc
35
---
---
Electrical Characteristics
T
A
= 25
o
C (Group A2, A3)
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| 2N3001 | 制造商:BOCA 制造商全稱:Boca Semiconductor Corporation 功能描述:SCRs (Silicon Controlled Rectifiers) |
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