參數(shù)資料
型號： 2N2907A-220M-ISOR1
廠商： SEMELAB LTD
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-257AB
封裝： TO-220M, 3 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 21K
代理商： 2N2907A-220M-ISOR1
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
2N2907A
Prelim. 4/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
IC = 10mA
IB = 0
IC = 10mAIE = 0
IE = 10mAIC = 0
VCE = 30V
VBE = 0.5V
IE = 0
VCB = 50V
TA = 150°C
VCE = 60V
VBE = 0.5V
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA 1
IC = 500mA
IC = 50mA
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V 1
IC = 500mA
VCE = 10V 1
IC = 50mA
VCE = 20V
f = 100MHz
VCB = 10V
IE = 0
f = 100kHz
VBE = 2V
IC = 0
f = 100kHz
VCC = 30V
IC = 150mA
IB1 = 15mA
VCC = 6V
IC = 150mA
IB1 = IB2 = 15mA
ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise stated)
V(BR)CEO1 Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICEX
Collector Cut-off Current
ICBO
Collector Cut-off Current
IB
Base Current
VCE(sat)1
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE
DC Current Gain
fT
Transition Frequency 2
Cob
Output Capacitance
Cib
Input Capacitance
ton
Turn–On Time
td
Delay Time
tr
Rise Time
toff
Turn–Off Time
ts
Storage Time
tf
Fall Time
60
5
50
0.01
10
50
0.4
1.6
0.6
1.3
2.6
75
100
300
50
200
8
30
26
45
610
20
40
70
100
50
80
20
30
V
nA
mA
nA
V
—
MHz
pF
ns
NOTES:
1) Pulse test: tp 300ms , d 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
相關(guān)PDF資料
PDF描述
2N2907ACSM4R 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA
2N2907L 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N2907L 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N2906A 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2N2907 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2907A-BP 功能描述:兩極晶體管 - BJT PNP Swt Trans 400mW, 60V, 600mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2907AC1 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR
2N2907AC3 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR
2N2907ACECC 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18
2N2907ACSM 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELPNP60V0.6ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:500mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*