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參數(shù)資料
| 型號(hào)： | 2N2907ACSM4R |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
| 封裝： | HERMETIC SEALED, LCC3-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 2N2907ACSM4R |
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7210
Issue 2
Page 1 of 3
2N2907ACSM4R
Low Power, High Speed Saturated Switching
Hermetic Surface Mounted Package.
Ideally suited for High Speed Switching
and General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-600mA
PD
Total Power Dissipation at
TA = 25°C
500mW
Derate Above 37.5°C
3.08mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols
Parameters
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
325
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2907ADCSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSHIRELDUAL PNP60V06ALCC1 |
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| 2N2907ADIE | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON |
| 2N2907AE3 | 制造商:Microsemi Corporation 功能描述:2N2907AE3 - Bulk |
| 2N2907AHR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hi-Rel 60 V, 0.6 A PNP transistor |
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