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參數(shù)資料
| 型號： | 2N2905 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 451K |
| 代理商： | 2N2905 |
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N2905
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
40
Volts
Collector-Base Cutoff Current
ICBO1
VCB = 60 Volts
10
A
Collector-Base Cutoff Current
ICBO2
VCB = 50 Volts
20
nA
Collector-Base Cutoff Current
ICBO3
VCB = 50 Volts, TA = 150
OC
20
A
Collector-Emitter Cutoff Current
ICES
VCE = 40 Volts
1
A
Emitter-Base Cutoff Current
IEBO1
VEB = 5 Volts
10
A
Emitter-Base Cutoff Current
IEBO2
VEB = 3.5 Volts
50
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55
OC
35
50
75
100
30
450
300
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
2.0
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 2.0 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
30
pF
Switching Characteristics
Saturated Turn-On Time
ton
45
ns
Saturated Turn-Off Time
toff
300
ns
Semicoa Corporation
Copyright
2010
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| 2N2905/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Switching Transistors |
| 2N2905_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2N2905A | 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2905A | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-39 |
| 2N2905A_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
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