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參數(shù)資料
| 型號(hào)： | 2N2906AUBC |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 2N2906AUBC |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
T4-LDS-0055 Rev. 4 (100247)
Page 1 of 6
DEVICES
LEVELS
2N2906A
2N2907A
JANSM – 3K Rads (Si)
2N2906AL
2N2907AL
JANSD – 10K Rads (Si)
2N2906AUA
2N2907AUA
JANSP – 30K Rads (Si)
2N2906AUB
2N2907AUB
JANSL – 50K Rads (Si)
2N2906AUBC
2N2907AUBC
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation @ TA = +25°C
PT
(1)
0.5
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
(1)
325
°C/W
1. See MIL-PRF-19500/291 for derating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 50Vdc
ICBO
10
μAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 4.0Vdc
IEBO
10
50
μAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
ICES
50
ηAdc
TO-18 (TO-206AA)
2N2906A, 2N2907A
4 PIN
2N2906AUA, 2N2907AUA
3 PIN
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
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PDF描述 |
|---|---|
| 2N2907AUB-TR | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2904A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2906DCSM-JQR-A | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2906AUBJANSR | 制造商:Microsemi Corporation 功能描述: |
| 2N2906CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N2906DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N2906E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 2N2906E_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:Laser Marking |
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