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參數(shù)資料
| 型號： | 2N2369ADCSM-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-6 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 415K |
| 代理商： | 2N2369ADCSM-JQR-B |
DUAL NPN SWITCHING
TRANSISTORS
2N2369ADCSM
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 4140
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (Each Side , TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
15
V
ICES
Collector-Cut-Off Current
VCE = 20V
IB = 0
0.4
VCB = 40V
IE = 0
10
VCB = 32V
IE = 0
0.2
VCB = 20V
IE = 0
ICBO
Collector-Cut-Off Current
TA = 150°C
(2)
30
VEB = 4.5V
IC = 0
10
IEBO
Emitter-Cut-Off Current
VEB = 4V
IC = 0
0.25
VCE = 10V
VBE = -0.25V
ICEX
Collector Cut-Off Current
TA = 125°C
30
A
IC = 10mA
VCE = 0.35V
40
120
IC = 30mA
VCE = 0.4V
30
120
IC = 10mA
VCE = 1.0V
40
120
TA = -55°C
20
hFE
(1)
Forward-current transfer
ratio
IC = 100mA
VCE = 1.0V
20
120
IC = 10mA
IB = 1.0mA
0.2
TA = 125°C
0.3
IC = 30mA
IB = 3mA
0.25
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 100mA
IB = 10mA
0.45
IC = 10mA
IB = 1.0mA
0.7
0.85
TA = 125°C
0.59
TA = -55°C
1.02
IC = 30mA
IB = 3mA
0.9
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 100mA
IB = 10mA
0.8
1.2
V
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
(2)
By design only, not a production test.
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