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參數(shù)資料
| 型號(hào)： | 2N2369ADCSM-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-6 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 415K |
| 代理商： | 2N2369ADCSM-JQR-B |
DUAL NPN SWITCHING
TRANSISTORS
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 4140
Issue 2
Page 1 of 3
2N2369ADCSM
Dual Silicon Planer Epitaxial NPN Transistors
Hermetic Ceramic Surface Mount Package
Designed For High Speed Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
Each Side
Total Device
VCBO
Collector – Base Voltage
40V
VCEO
Collector – Emitter Voltage
15V
VCES
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
4.5V
IC
Continuous Collector Current
200mA
PD
Total Power Dissipation at
TA = 25°C
360mW
500mW
Derate Above 25°C
2.06mW/°C
2.86mW/°C
PD
Total Power Dissipation at
TSP = 125°C
360mW
500mW
Derate Above 125°C
4.80mW/°C
6.67mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
EachSide
Total Device
RθJA
Thermal Resistance, Junction To Ambient
486°C/W
350°C/W
RθJSP
Thermal Resistance, Junction To Solder Point
208.3°C/W
150°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2369ADCSMG4 | 200 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N2814 | 10 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 2N3598 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 2N5540 | 10 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 2N3598 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-61 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2369AJAN | 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述: |
| 2N2369AJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 3-Pin TO-18 |
| 2N2369AJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 3-Pin TO-18 |
| 2N2369AJANTXV | 制造商:Motorola Inc 功能描述: |
| 2N2369AJTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: 制造商:Motorola Inc 功能描述: |
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