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參數(shù)資料
| 型號(hào)： | 2N2222ACSM-RHG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 2N2222ACSM-RHG4 |
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N2222ACSM-RH
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 10mA
IC = 10A
IE = 10AIC = 0
IB = 0
VCE = 60V
IE = 0
VCB = 60V
TC = 125°C
IC = 0
VEB = 3V (off)
VCE = 60V
VEB = 3V (off)
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 150mA
IB = 15mA
IC = 500mA
IC = 50mA
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 10mA
VCE = 10V
IC = 150mA
VCE = 10V
IC = 150mA
VCE = 1V
IC = 500mA
VCE = 10V
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO*
Collector – Base Breakdown Voltage
V(BR)EBO*
Emitter – Base Breakdown Voltage
ICEX*
Collector Cut-off Current (IC = 0)
ICBO*
Collector – Base Cut-off Current
IEBO*
Emitter Cut-off Current (IC = 0)
IBL*
Base Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
TA = –55°C
40
75
6
10
20
0.3
1
0.6
1.2
2
35
50
75
35
100
300
50
40
V
nA
A
nA
V
—
fT
Transition Frequency
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small Signal Current Gain
IC = 20mA
VCE = 20V
f = 100MHz
VCB = 10V
IE = 0
VBE = 0.5V
IC = 0
f = 1.0MHz
IC = 1mA
VCE = 10V
f = 1kHz
IC = 10mA
VCE = 10V
f = 1kHz
300
8
30
50
300
75
375
MHz
pF
—
10
25
225
60
ns
VCC = 30V
VBE = 0.5V (off)
IC1 = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
IB1 = IB2 = 15mA
fT is defined as the frequency at which hFE extrapolates to unity.
* Pulse test tp = 300s , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)
Document Number 5551
Issue 1
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