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參數(shù)資料
| 型號： | 2N2219A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 378K |
| 代理商： | 2N2219A |
Data Sheet PU10338EJ01V0DS
4
2SC4536
5
1
2
3
4
0
5
10
20
50
100
200
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise
Figure
NF
(dB)
VCE = 10 V
f = 1 GHz
70
80
60
50
40
30
10
30
50
100
300
Collector Current IC (mA)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
3rd
Order
Intermodulation
Distortion
IM
3(dBc)
2nd
Order
Intermodulation
Distortion
(+)
IM
2+
(dBc)
2nd
Order
Intermodulation
Distortion
(–)
IM
2–
(dBc)
IM2–
IM2+
IM3
VCE = 10 V
IM3 :VO = 110 dB V/75
2 tone each
f = 2 × 190 – 200 MHz
IM2+ :VO = 105 dB V/75
2 tone each
f = 90 + 100 MHz
IM2– :VO = 105 dB V/75
2 tone each
f = 190 – 90 MHz
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAXIMUM POWER
GAIN, MAG vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Power
Gain
G
max
(u)
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
10
2
4
6
8
0
10
100
30
50
300
MAG
Gmax (u)
|S21e|
2
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.csd-nec.com/
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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