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參數(shù)資料
| 型號： | 2N2219A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 378K |
| 代理商： | 2N2219A |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4536
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
The mark
shows major revised points.
Document No. PU10338EJ01V0DS (1st edition)
(Previous No. P10369EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1994, 2003
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier.
It features
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it
employs plastic surface mount type package (SOT-89).
FEATURES
Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA
Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4536
25 pcs (Non reel)
12 mm wide embossed taping
2SC4536-T1
1 kpcs/reel
Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
250
mA
Total Power Dissipation
Ptot
Note
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on double-sided copper-clad 16 cm
2
× 0.7 mm (t) ceramic substrate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2219 | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N2270 | 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N2243A | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N2243 | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N2237 | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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