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參數(shù)資料
| 型號(hào)： | 2N1890 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N1890 |
2N1711, 2N1890 JAN SERIES
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 10 Adc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
2N1711, S
hFE
20
100
50
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
2N1711, S
2N1890, S
IC = 50 mAdc, IB = 5.0 mAdc
2N1890, S
VCE(sat)
1.5
5.0
1.2
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 50 mAdc, IB = 5.0 mVdc
2N1890, S
VBE(sat)
1.3
0.9
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
hfe
80
90
200
270
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz
h
fe
3.5
12
Small-Signal Short-Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc
hib
4.0
8.0
Small-Signal Short-Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc
2N1711, S
2N1890, S
hob
1.0
.03
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
2N1711, S
2N1890, S
Cobo
8.0
5.0
25
15
pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 1 of MIL-PRF-19500/225)
ton + toff
30
ηs
(3) Pulse Test: Pulse Width 250 to 350
s, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N1890S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 0.5A 3PIN TO-5 - Bulk |
| 2N1891 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-5 |
| 2N1892 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 300MA I(C) | TO-5 |
| 2N1893 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N1893 WAF | 制造商:ON Semiconductor 功能描述: |
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