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參數(shù)資料
| 型號(hào)： | 2N1890 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 55K |
| 代理商： | 2N1890 |
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
Qualified Level
2N1711
2N1890
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
2N1711
2N1890
Unit
Collector-Base Voltage
VCBO
75
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
0.8
3.0
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Impedance
ZθJX
58
0C/W
1) Derate linearly 4.57 mW/
0C for TA > 250C
2) Derate linearly 17.2 mW/
0C for TC > 250C
TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 Adc
2N1711, S
2N1890, S
V(BR)CBO
75
100
Vdc
Collector-Emitter Breakdown Voltage
RBE = 10 , IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
50
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
30
60
Vdc
Emitter-Base Breakdown Voltage
IE = 100 Adc
V(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
2N1711
VCB = 80 Vdc
2N1890
ICBO
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
5.0
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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參數(shù)描述 |
|---|---|
| 2N1890S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 0.5A 3PIN TO-5 - Bulk |
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| 2N1893 WAF | 制造商:ON Semiconductor 功能描述: |
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