參數(shù)資料
型號： 2MBI600VJ-120-50
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： 600 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-22
文件頁數(shù)： 3/6頁
文件大?。?/td> 390K
代理商： 2MBI600VJ-120-50
2
3
IGBT Modules
http://www.fujisemi.com
2MBI600VJ-120-50
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.62, Tj=25°C
Vcc=600V, VGE=±15V, Rg=0.62, Tj=125°C, 150°C
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, Rg=0.62, Tj=150°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
Switching loss vs. Collector current (typ.)
Vcc=600, VGE=±15V, Rg=0.62, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
10
100
1000
10000
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr
,
to
ff
,
tf
[n
se
c]
tf
tr
toff
ton
10
100
1000
10000
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr
,
to
ff
,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125
oC
Tj=150
oC
10
100
1000
10000
0.1
1
10
100
Gate resistance: Rg []
S
w
itc
hi
ng
tim
e:
to
n,
tr
,
to
ff
,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125
oC
Tj=150
oC
0
50
100
150
200
250
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
lo
ss
:
E
on
,
E
of
f,
E
rr
[m
J/
pu
ls
e]
Eon
Eoff
Err
Tj=125
oC
Tj=150
oC
0
100
200
300
400
0
1
10
100
Gate resistance: Rg []
S
w
itc
hi
ng
lo
ss
:
E
on
,
E
of
f,
E
rr
[m
J/
pu
ls
e]
Eoff
Err
Eon
Tj=125
oC
Tj=150
oC
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
相關(guān)PDF資料
PDF描述
2N1008B 55 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
2N1015D NPN, Si, POWER TRANSISTOR
2N2657 60 V, NPN, Si, POWER TRANSISTOR, TO-5
2N1208 60 V, NPN, Si, POWER TRANSISTOR, TO-61
2N1918 8 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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