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參數(shù)資料
| 型號： | 2MBI600U4G-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | M248, 10 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 448K |
| 代理商： | 2MBI600U4G-120 |
33
IGBT Modules
1MBI1200U4C-120
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj=125°C
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj=125°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj=125°C
Reverse bias safe operating area (max.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj= 125°C
± VGE=15V ,Tj = 125°C / chip
0.0
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1.0
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0
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2000
Sw
itc
hi
ng
tim
e
:
to
n,
tr,
to
ff
,t
f
[u
s]
Collector current : Ic [ A ]
0.0
1.0
2.0
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5.0
6.0
0
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Sw
itc
hi
ng
tim
e
:
to
n,
tr,
to
ff
,t
f
[u
s]
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
50
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150
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400
0
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S
w
itc
hi
ng
lo
ss
:
Eo
n,
Eo
ff
,E
rr
[m
J/
pu
ls
e
]
Collector current : Ic [ A ] , Forward current : IF [ A ]
Eon
Eoff
Err
0
100
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1000
0
2
4
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18
Sw
itc
hi
ng
lo
ss
:
Eo
n,
Eo
ff
,E
rr
[m
J/
pu
ls
e
]
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
400
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1200
1600
2000
2400
2800
0
200
400
600
800
1000 1200 1400
C
ol
le
ct
or
cu
rr
en
t
:I
c
[A
]
Collector - Emitter voltage : VCE [ V ]
ton
tr
toff
tf
相關(guān)PDF資料 |
PDF描述 |
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| 2MBI600U4G-170 | 800 A, 1700 V, N-CHANNEL IGBT |
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| 2MBI75U4A-120 | 100 A, 1200 V, N-CHANNEL IGBT |
| 2MBP600UN-120V | 600 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI600U4G-170 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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| 2MBI600VE-120-50 | 制造商:Fuji Electric 功能描述:IGBT 2 PK V SE 600A 1200V M238G 制造商:Fuji Electric 功能描述:2 Pack IGBT VE-series, 600A, 1200V |
| 2MBI600VJ-120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 2MBI600VN-120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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