參數(shù)資料
型號: 2MBI600U4G-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 600 A, 1200 V, N-CHANNEL IGBT
封裝: M248, 10 PIN
文件頁數(shù): 2/6頁
文件大小: 448K
代理商: 2MBI600U4G-120
2
1MBI1200U4C-120
2
IGBT Modules
Characteristics (Representative)
Dynamic Gate charge (typ.)
Tj=25°C ,chip
VGE=+15V,chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
Tj=25°C ,chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Tj= 25°C
0
400
800
1200
1600
2000
2400
2800
0.0
1.0
2.0
3.0
4.0
5.0
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Collector-Emitter voltage : VCE [V]
VGE=20
15V
12V
10V
8V
0
400
800
1200
1600
2000
2400
2800
0.0
1.0
2.0
3.0
4.0
5.0
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
400
800
1200
1600
2000
2400
2800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
ol
le
ct
or
-E
m
itt
er
vo
lta
ge
:
V
C
E
[V
]
Gate - Emitter voltage : VGE [ V ]
Ic=2400A
Ic=1200A
Ic=600A
1
10
100
1000
0
10
20
30
C
ap
ac
ita
nc
e
:
C
ie
s,
C
oe
s,
C
re
s
[n
F
]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
200
400
600
800
1000
0
1000 2000 3000 4000 5000 6000
Gate charge : Qg [ nC ]
C
ol
le
ct
or
-E
m
itt
er
vo
lta
ge
:V
C
E
[V
]
0
5
10
15
20
25
G
at
e-
E
m
itt
er
vo
lta
ge
:V
G
E
[V
]
VGE
VCE
相關(guān)PDF資料
PDF描述
2MBI600U4G-170 800 A, 1700 V, N-CHANNEL IGBT
2MBI600VN-120-50 600 A, 1200 V, N-CHANNEL IGBT
2MBI75F-060 75 A, 600 V, N-CHANNEL IGBT
2MBI75U4A-120 100 A, 1200 V, N-CHANNEL IGBT
2MBP600UN-120V 600 A, 1200 V, N-CHANNEL IGBT
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