參數(shù)資料
型號(hào): 2MBI300U4H-170
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 400 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁(yè)數(shù): 9/13頁(yè)
文件大小: 219K
代理商: 2MBI300U4H-170
*C
MS5F6137
13
9
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 125°C/ chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Vcc=900V
Ic=300A
Tj= 25°C
Tj= 25°C / chip
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1MHz, Tj= 25°C
0
200
400
600
800
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
C
VGE=20V15V
12V
10V
8V
0
200
400
600
800
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
C
VGE=20V 15V
12V
10V
8V
0
200
400
600
800
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
C
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
C
Ic=600A
Ic=300A
Ic=150A
0.1
1.0
10.0
100.0
1000.0
0
10
20
30
Collector-Emitter voltage : VCE [V]
C
Cies
Coes
Cres
0
200
400
600
800
1000
Gate charge : Qg [nC]
C
G
[
VGE
VCE
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