參數(shù)資料
型號: 2MBI150UA-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 3/4頁
文件大?。?/td> 101K
代理商: 2MBI150UA-120
2MBI150UA-120
IGBT Module
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2, Tj= 25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 2.2 ,Tj <=125°C
10
100
1000
10000
0
50
100
150
200
250
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
ton
toff
tr
tf
10
100
1000
10000
0
50
100
150
200
250
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
toff
ton
tr
tf
10
100
1000
10000
0.1
1.0
10.0
100.0
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Gate resistance : Rg [ ]
tr
tf
toff
ton
0
5
10
15
20
25
30
0
50
100
150
200
250
300
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
0.1
1.0
10.0
100.0
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Gate resistance : Rg [ ]
Eoff
Err
Eon
0
100
200
300
400
0
400
800
1200
Collector
current
:Ic
[
A
]
Collector - Emitter voltage : VCE [ V ]
相關(guān)PDF資料
PDF描述
2MBI200NB-120 200 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01B 300 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01A 300 A, 1200 V, N-CHANNEL IGBT
2MBI300NB-060-01B 300 A, 600 V, N-CHANNEL IGBT
2MBI300NB-060-01F 300 A, 600 V, N-CHANNEL IGBT
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