參數(shù)資料
型號(hào): 2MBI150UA-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 2/4頁
文件大小: 101K
代理商: 2MBI150UA-120
2MBI150UA-120
IGBT Module
Characteristics (Representative)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1M Hz, Tj= 25°C
Vcc=600V, Ic=150A, Tj= 25°C
0
100
200
300
400
012
34
5
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
01
2
345
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
012
34
5
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
101520
25
Collector
-
Emitter
voltage
:
VCE
[
V
]
Gate - Emitter voltage : VGE [ V ]
Ic=300A
Ic=150A
Ic=75A
0.1
1.0
10.0
100.0
010
20
30
Capacitance
:
Cies,
Coes,
Cres
[
nF
]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
150
300
450
600
750
900
Collector-Emitter
voltage
:VCE
[
200V/div
]
Gate
-
Emitter
voltage
:
VGE
[
5V/div
]
Gate charge : Qg [ nC ]
VGE
VCE
相關(guān)PDF資料
PDF描述
2MBI200NB-120 200 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01B 300 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01A 300 A, 1200 V, N-CHANNEL IGBT
2MBI300NB-060-01B 300 A, 600 V, N-CHANNEL IGBT
2MBI300NB-060-01F 300 A, 600 V, N-CHANNEL IGBT
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參數(shù)描述
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