參數(shù)資料
型號： 2MBI1200UG-170
廠商： Electronic Theatre Controls, Inc.
英文描述： IGBT MODULE
中文描述： IGBT模塊
文件頁數(shù)： 4/13頁
文件大小： 475K
代理商： 2MBI1200UG-170
H04-004-03a
MS5F5932
13
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.8~2.1 Nm (M4)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*)
Biggest internal terminal resistance among arm.
μs
Sense Terminals
2.1
VCE=10V,VGE=0V,f=1MHz
Vcc = 900V
Ic = 1200A
VGE=±15V,Tj=125°C
-
1.30
-
n
A
Screw Torque *2
Lead resistance, terminal-chip *
Mounting
Main Terminals
Gate-Emitter
threshold voltage
VGE = 0V
VCE = 1700V
VCE = 0V
IGES
ICES
Input capacitance
Forward on voltage
-
m
R lead
-
Reverse recovery
Turn-on
0.25
Rgon = 0.1
Ω
Rgoff = 0.4
Collector-Emitter
saturation voltage
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Turn-off
ton
-
-
VGE=0V
-
1.80
2.00
0.45
2.15
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
-
-
toff
tf
VCE(sat)
(main terminal)
-
-
-
Cies
VF
(main terminal)
0.40
2.10
2.30
-
-
trr
VF
(sense terminal)
IF = 1200A
1700
±20
Ic
Icp
1
530
1200
3060
2400
1200
2400
4960
Continuous
V
V
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
1ms
1 device
3400
VAC
N m
AC : 1min.
-Ic pulse
Pc
Tj
Tstg
A
°C
W
150
-Ic
Collector current
Junction temperature
Storage temperature
Isolation
voltage
Collector Power Dissipation
1ms
Units
max.
typ.
min.
Characteristics
5.75
10
Conditions
Viso
Items
Symbols
between terminal and copper base *1
-40 ~ +125
Ic = 1200mA
1600
VCE = 20V
VGE=±20V
-
-
-
5.5
1.0
mA
V
-
7.5
V
6.5
Units
-
-
2.05
2.40
120
2.35
-
-
Maximum
Ratings
-
-
2.35
2.70
2.65
-
1.50
2.45
V
μs
IF = 1200A
-
nF
-
VCE(sat)
(sense terminal)
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE(th)
VGE=15V
Ic = 1200A
tr
-
0.75
-
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