參數(shù)資料
型號(hào)： 29LV160B
廠商： Advanced Micro Devices, Inc.
元件分類： DRAM
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 32/63頁(yè)
文件大?。?/td> 762K
代理商： 29LV160B
32
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be veri-
fied by DATA polling or toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7. (Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tWC
Address
OE
CE
55h
2AAh
555h
10h
ProIn
VA
VA
NOTES:
VA=Valid Address for reading status data(see "Write Operation Status").
tAS
tAH
tGHWL
tCH
tWP
tDS
tDH
tWHWH2
Read Status Data
Erase Command Sequence(last two cycle)
tBUSY
tRB
tCS
tWPH
tVCS
WE
Data
RY/BY
VCC
相關(guān)PDF資料
PDF描述
29LV160C-55R 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-70 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-90 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV320BTC-70 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV400C-55R 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV160BE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
29LV160BT-90V 制造商: 功能描述: 制造商:undefined 功能描述:
29LV160C-55R 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV160C-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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