參數(shù)資料
型號(hào): 29LV160B
廠商: Advanced Micro Devices, Inc.
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16Mb(2M×8位/1Mx16位), 3V, CMOS引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 31/63頁(yè)
文件大?。?/td> 762K
代理商: 29LV160B
31
P/N:PM1041
MX29LV160BT/BB
REV. 1.2, JUL. 01, 2004
R
Figure 5. CE CONTROLLED WRITE TIMING WAVEFORM
tWC
tWH
tGHEL
tWHWH1 or 2
tCP
Address
WE
OE
CE
Data
Q7
PA
Data Polling
DOUT
RESET
RY/BY
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
tAH
tAS
PA for program
SA for sector erase
555 for chip erase
tRH
tDH
tDS
tWS
A0 for program
55 for erase
tCPH
tBUSY
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
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