- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371439 > 29F040C-90 (Macronix International Co., Ltd.) 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29F040C-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 4分位[為512k × 8] CMOS單電壓5V只等于部門閃存 |
| 文件頁數(shù)： | 7/38頁 |
| 文件大小： | 592K |
| 代理商： | 29F040C-90 |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
7
P/N:PM1201
REV. 1.0, DEC. 20, 2005
MX29F040C
READ/RESET COMMAND
The read or reset operation is initiated by writing the read/
reset command sequence into the command register.
Microprocessor read cycles retrieve array data. The de-
vice remains enabled for reads until the command regis-
ter contents are altered.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid com-
mand must then be written to place the device in the
desired state.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manu-
facturer and device codes must be accessible while the
device resides in the target system. PROM program-
mers typically access signature codes by raising A9 to
a high voltage. However, multiplexing high voltage onto
address lines is not generally desired system design prac-
tice.
The MX29F040C contains a Silicon-ID-Read operation
to supplement traditional PROM programming methodol-
ogy. The operation is initiated by writing the read silicon
ID command sequence into the command register. Fol-
lowing the command write, a read cycle with
A1=VIL,A0=VIL retrieves the manufacturer code of C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of A4H for MX29F040C.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H.
The Automatic Chip Erase does not require the device to
be entirely pre-programmed prior to executing the Auto-
matic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the Read
mode. The system is not required to provide any control
or timing during these operations.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required).
If the Erase operation was unsuccessful, the data on Q5
is "1"(see Table 4), indicating the erase operation ex-
ceed internal timing limit.
The automatic erase begins on the rising edge of the last
WE# or CE#, whichever happens first pulse in the com-
mand sequence and terminates when the data on Q7 is
"1" and the data on Q6 stops toggling for two consecu-
tive read cycles, at which time the device returns to the
Read mode.
Pins
Manufacture code
Device code for MX29F040C VIH
Sector Protection Verification X
A0
VIL
A1
VIL
VIL
VIH
VIH
Q7
1
1
0
0
Q6
1
0
0
0
Q5
0
1
0
0
Q4
0
0
0
0
Q3
0
0
0
0
Q2
0
1
0
0
Q1
1
0
0
0
Q0
0
0
1
0
Code (Hex)
C2H
A4H
01H (Protected)
00H(Unprotected)
X
TABLE 3. EXPANDED SILICON ID CODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F080-12 | 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F080-70 | 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F080-90 | 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F1610 | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 29F1610A | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F0418-0SR (900PC RL) | 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,83 OHM,GULL WING,4 LINES,-55-+125,BLK - Tape and Reel |
| 29F0418-0SR-10 | 功能描述:信號調(diào)節(jié) 83ohms 100MHz 6A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel |
| 29F0418-1SR | 功能描述:FERRITE 6A 119 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準包裝:1,000 系列:EMI1812 頻率對應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A |
| 29F0418-1SR (900PC RL) | 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,119 OHM,GULL WING,4 LINES,-55-+125 - Tape and Reel |
| 29F0418-1SR-10 | 功能描述:EMI/RFI 抑制器及鐵氧體 119ohms 100MHz 6A Thru-hole RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。