參數(shù)資料
型號: 28F800F3
廠商: Intel Corp.
英文描述: 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲器)
中文描述: 3伏快速啟動塊閃存(3伏分位快速引導(dǎo)塊閃速存儲器)
文件頁數(shù): 23/47頁
文件大?。?/td> 277K
代理商: 28F800F3
E
FAST BOOT BLOCK DATASHEET
23
PRODUCT PREVIEW
Suspend
Program
Loop
Start
Write 40H,
Address
Write Data and
Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Program Complete
FULL STATUS CHECK PROCEDURE
Repeat for subsequent byte writes.
SR full status check can be done after each byte write or after a
sequence of program operations.
Write FFH after the last byte write operation to place device in read
array mode.
SR.4, SR.3 and SR.1 are only cleared by the Clear Staus Register
command, in cases where multiple locations are written before full
status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
No
Yes
Suspend
Program
1
0
Comments
Data = 40H
Addr = Location to Be
Written
Data = Data to Be Written
Addr = Location to Be
Written
Check SR.7
1 = WSM Ready
0 = WSM Busy
Comments
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect Detect
WP# = V
IL
Read Status Register
Data (See Above)
V
PP
Range Error
Device Protect Error
Program Successful
SR.3 =
SR.1 =
1
0
1
0
Program Error
SR.4 =
1
0
Status Register Data
Check SR.4
1 = Data Write Error
Bus Operation
Write
Write
Standby
Read
Command
Program Setup
Data
Bus Operation
Standby
Standby
Standby
Command
Figure 8. Automated Program Flowchart
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