- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368957 > 28F800F3 (Intel Corp.) 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F800F3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲器) |
| 中文描述： | 3伏快速啟動塊閃存（3伏分位快速引導(dǎo)塊閃速存儲器） |
| 文件頁數(shù)： | 14/47頁 |
| 文件大小： | 277K |
| 代理商： | 28F800F3 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁
FAST BOOT BLOCK DATASHEET
E
14
PRODUCT PREVIEW
Table 3. Command Definitions
(1)
Bus Cycles
First Bus Cycle
Second Bus Cycle
Command
Req’d.
Notes
Oper
(2)
Addr
(3)
Data
(4)
Oper
(2)
Addr
(3)
Data
(4)
Read Array/Reset
1
Write
X
FFH
Read Identifier Codes
≥
2
2
5
Write
X
90H
Read
IA
ID
Read Status Register
Write
X
70H
Read
X
SRD
Clear Status Register
1
Write
X
50H
Block Erase
2
6,7
Write
X
20H
Write
BA
D0H
Program
2
6,7,8
Write
X
40H
or
10H
Write
WA
WD
Block Erase and Program
Suspend
1
6
Write
X
B0H
Block Erase and Program
Resume
1
6
Write
X
D0H
Set Read Configuration
2
Write
X
60H
Write
RCD
03H
NOTES:
1.
2.
3.
Commands other than those shown above are reserved by Intel for future device implementations and should not be used.
Bus operations are defined in Table 2.
X = Any valid address within the device.
IA = Identifier Code Address.
BA = Address within the block being erased.
WA = Address of memory location to be written.
RCD = Data to be written to the read configuration register. This data is presented to the device on A
15-0
; set all other
address inputs to
“0.”
SRD = Data read from status register. See Table 5 for a description of the status register bits.
WD = Data to be written at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first).
ID = Data read from identifier codes. See Table 4 for manufacturer and device codes.
RCD = Data to be written to read configuration register. See Table 6 for a description of the read configuration register bits.
Following the Read Identifier Codes command, read operations access manufacturer, device codes, and read
configuration register.
Following a block erase, program, and suspend operation, read operations access the status register.
To issue a block erase, program, or suspend operation to a lockable block, hold WP# at V
IH
.
Either 40H or 10H are recognized by the WSM as the program setup.
4.
5.
6.
7.
8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F160F3 | 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲器) |
| 28F2001BX-T | 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators |
| 28F256 | FASTENERS, TIES CABLE |
| 28F256 | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 28F320S3 | WORD-WIDE FlashFile MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28FAN2500_AAA3A862 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 28FAN2502_AAA3A862 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 28FAN2503_AAA3A862 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 28FAN2508_AAA3A862 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 28FAN2509_AAA3A862 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。