參數(shù)資料
型號: 28F400BL-TB
廠商: Intel Corp.
英文描述: 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 4 MBlT(256K × 16,為512k × 8)低功耗啟動塊閃存系列
文件頁數(shù): 44/49頁
文件大?。?/td> 427K
代理商: 28F400BL-TB
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
44
PRELIMINARY
Table 17. Erase and Program Timings
V
PP
= 2.7V
V
PP
= 12V
Sym
Parameter
Notes
Typ
1
Max
3
Typ
1
Max
3
Unit
t
BWPB
Block Program Time
(Parameter)
2
0.10
0.30
0.03
0.10
sec
t
BWMB
Block Program Time (Main)
2
0.80
2.40
0.24
0.80
sec
t
WHQV1
t
EHQV1
Program Time
2
22
200
8
185
μs
t
WHQV2
t
EHQV2
Block Erase Time (Parameter)
2
1
5.0
0.8
4.8
sec
t
WHQV3
t
EHQV3
Block Erase Time (Main)
2
1.8
8.0
1.1
7.0
sec
t
WHRH1
t
EHRH1
Program Suspend Latency
3
5
10
5
10
μs
t
WHRH2
t
EHRH2
Erase Suspend Latency
3
5
20
6
12
μs
NOTES:
1.
2.
3.
Typical values measured at T
A
= +25°C and nominal voltages.
Excludes external system-level overhead.
Sampled, but not 100% tested.
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