參數(shù)資料
型號(hào): 28F0101024K
廠商: Intel Corp.
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 28F010 1024K(128K的× 8)的CMOS閃存
文件頁(yè)數(shù): 15/33頁(yè)
文件大?。?/td> 895K
代理商: 28F0101024K
E
28F010
15
Start Erasure
(4)
Data = 00H
Program All
Bytes to 00H
Apply V
PPH
(1)
ADDR = 00H
PLSCNT = 0
Time Out 10 ms
Time Out 6 μs
Read Data
from Device
Data = FFH
Inc
PLSCNT =
1000
Last Address
Erasure
Completed
Erase Error
Write Erase
Set-Up Cmd
Write Erase Cmd
Write Read Cmd
Apply V
PPL
(1)
Apply V
PPL
(1)
Write Erase
Verify Cmd
Increment Addr
Y
Bus
Operation
Comments
Entire Memory Must = 00H
Before Erasure
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Standby
Wait for V
PP
Ramp to V
PPH
(1)
Initialize Addresses and
Pulse-Count
Write
Data = 20H
Write
Data = 20H
Stand-by
Duration of Erase Operation
(t
WHWH2
)
Write
Addr = Byte to Verify;
Data = A0H; Stops Erase
Operation
(3)
Standby
t
WHGL
Read
Read Byte to Verify Erasure
Standby
Compare Output to FFH
Increment Pulse-Count
Standby
Wait for V
PP
Ramp to V
PPL
(1)
N
Y
N
N
N
Y
Y
Command
Set-Up
Erase
Erase
Erase
(2)
Verify
Write
Data = 00H, Resets the
Register for Read Operations
Read
0207_05
NOTES:
1.
2.
See DC Characteristicsfor the value of V
PPH
and V
PPL
.
Erase Verify is performed only after chip-erasure. A final read/compare may be performed (optional) after the register is
written with the Read command.
Refer to Principles of Operation
CAUTION:
The algorithm
must be followed
to ensure proper and reliable operation of the device.
3.
4.
Figure 5. 28F010 Quick-Erase Algorithm
相關(guān)PDF資料
PDF描述
28F010 1024K (128K x 8) CMOS FLASH MEMORY
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28F0121-0SR 功能描述:FERRITE 10A 48 OHM SMD RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對(duì)應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812(4532 公制) 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度(最大):0.069"(1.75mm) 尺寸/尺寸:0.177" L x 0.126" W(4.50mm x 3.20mm) 其它名稱:Q1712807A