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參數(shù)資料
| 型號： | 27N120BN |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 72A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 第72A，1200伏，不擴散核武器條約系列N溝道IGBT的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 153K |
| 代理商： | 27N120BN |
200
4
Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C
2
HGTG27N120BN / HGT5A27N120BN
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θ
JC
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 27A,
V
CE
= 960V,
V
GE
= 15V,
R
G
= 3
,
L = 1mH,
Test Circuit (Figure 18)
-
22
28
ns
Current Rise Time
-
20
25
ns
Current Turn-Off Delay Time
-
220
280
ns
Current Fall Time
-
140
200
ns
Turn-On Energy (Note 5)
-
2.7
-
mJ
Turn-On Energy (Note 5)
-
5.1
6.5
mJ
Turn-Off Energy (Note 4)
-
3.4
4.2
mJ
o
C/W
Thermal Resistance Junction To Case
-
-
0.25
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
40
50
10
V
GE
= 15V
25
75
100
125
150
30
20
60
70
80
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
120
0
I
C
,
40
80
600
800
400
200
1000
1200
0
160
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
μ
H
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.25
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
V
GE
15V
12V
75
o
C
75
o
C
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
10
60
20
50
10
100
T
C
V
GE
15V
110
o
C
12V
110
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
11
12
13
14
15
16
0
10
20
30
40
0
100
200
300
500
t
SC
I
SC
50
400
V
CE
= 960V, R
G
= 3
, T
J
= 125
o
C
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