參數(shù)資料
型號: 27N120BN
廠商: Fairchild Semiconductor Corporation
英文描述: 72A, 1200V, NPT Series N-Channel IGBT
中文描述: 第72A,1200伏,不擴(kuò)散核武器條約系列N溝道IGBT的
文件頁數(shù): 1/8頁
文件大?。?/td> 153K
代理商: 27N120BN
2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are
N
on-
P
unch
T
hrough (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
Symbol
Features
72A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance
SPICE Model
Temperature Compensating
SABER Model
www.fairchildsemi.com
Avalanche Rated
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N120BN
TO-247
G27N120BN
HGT5A27N120BN
TO-247-ST
27N120BN
NOTE: When ordering, use the entire part number.
C
E
G
JEDEC STYLE TO-247-ST
COLLECTOR
(BOTTOM SIDE
METAL)
G
C
E
G
C
E
COLLECTOR
(BOTTOM SIDE
METAL)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
October 2004
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