參數(shù)資料
型號: 24 - 27 GHz HPA
廠商: SIEMENS AG
英文描述: 24 - 27 GHz GaAs High Power Amplifier MMIC(24 - 27 GHz砷化鎵微波放大器)
中文描述: 24 - 27 GHz的砷化鎵MMIC的高功率放大器(24 - 27千兆赫砷化鎵微波放大器)
文件頁數(shù): 1/3頁
文件大小: 91K
代理商: 24 - 27 GHZ HPA
Data Sheet
1
2001-01-01
Description
This two-stage GaAs MMIC high power amplifier is intended for use in radio link
applications. It provides an output power of 27 dBm at 1 dB gain compression. The
device is fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High
Electron Mobility Transistor processing technology.
24 - 27 GHz GaAs High Power
Amplifier MMIC
Preliminary Data Sheet
24 - 27 GHz HPA
Two-Stage Monolithic Microwave Integrated Circuit (MMIC)
HEMT Amplifier
Input/Output matched to 50
Frequency range: 24 GHz to 27 GHz
Gain > 12 dB
P
1dB
> 27 dBm
P
SAT
> 29 dBm
Chip size: 2.71 mm
×
3.0 mm
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Package
24 - 27 GHz HPA
on request
Chip
Electrical Specifications
V
G
= 0 V,
V
D
= 5 V,
I
D
= 930 mA
Parameter
Limit Values
Unit
Test Conditions
min.
typ.
max.
Frequency Range
24
27
GHz
P
1dB
@ 26 GHz
P
SAT
@ 26 GHz
Gain @ 26 GHz
27
dBm
29
dBm
12
dB
Input Return Loss
<
10
dB
Output Return Loss
<
10
dB
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