參數(shù)資料
型號: 24 - 28 GHz Doubler
廠商: SIEMENS AG
英文描述: 24 - 28 GHz GaAs Doubler MMIC(25 - 28 GHz砷化鎵微波倍頻器)
中文描述: 24 - 28 GHz的砷化鎵倍頻單片集成電路(25 - 28千兆赫砷化鎵微波倍頻器)
文件頁數(shù): 1/3頁
文件大?。?/td> 91K
代理商: 24 - 28 GHZ DOUBLER
Data Sheet
1
2001-01-01
Description
This GaAs MMIC Frequency Doubler is intended for use in radio link applications. It
provides a gain of – 8 dB at an input frequency of 14 GHz. The device is fabricated with
a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor
processing technology.
24 - 28 GHz GaAs Doubler MMIC
Preliminary Data Sheet
24 - 28 GHz Doubler
Monolithic Microwave Integrated Circuit (MMIC)
Frequency Doubler (coplanar design)
Input/Output matched to 50
Input frequency range: 12 GHz to 14 GHz
Output frequency range: 24 GHz to 28 GHz
Chip size: 2.5 mm
×
1.0 mm
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Package
24 - 28 GHz Doubler
on request
Chip
Electrical Specifications
(
V
DS
= 3 V)
Parameter
Limit Values
Unit
Test Conditions
min.
typ.
max.
Input frequency range
f
0
Gain
12
14
GHz
– 8
dB
Input power
8
15
dBm
Output power at
f
0
V
GS
I
DS
@ 14 dBm input power
< – 15
dBm
– 1
– 0.5
0
V
40
mA
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