參數(shù)資料
型號: 20MT120UFAPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: IGBT 晶體管
英文描述: 20 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, MTP, 16 PIN
文件頁數(shù): 5/11頁
文件大?。?/td> 219K
代理商: 20MT120UFAPBF
Document Number: 94470
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 03-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Diode forward voltage drop
VFM
IC = 20 A
-
2.48
2.94
V
IC = 40 A
-
3.28
3.90
IC = 20 A, TJ = 125 °C
-
2.44
2.84
IC = 40 A, TJ = 125 °C
-
3.45
4.14
IC = 20 A, TJ = 150 °C
-
2.21
2.93
Reverse recovery energy of the diode
Erec
VGE = 15 V, Rg = 5 , L = 200 μH
VCC = 600 V, IC = 20 A
TJ = 125 °C
-
420
630
μJ
Diode reverse recovery time
trr
-
98
150
ns
Peak reverse recovery current
Irr
-33
50
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
TJ
- 40
-
150
°C
Storage temperature range
TStg
- 40
-
125
Junction to case
IGBT
RthJC
-
0.53
0.64
°C/W
Diode
-
0.69
0.83
Case to sink per module
RthCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Clearance
External shortest distance in air between 2 terminals
5.5
-
mm
Creepage
Shortest distance along external surface of the
insulating material between 2 terminals
8-
-
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 %
Nm
Weight
66
g
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