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參數(shù)資料
| 型號： | 20MT120UFAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 20 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, MTP, 16 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 219K |
| 代理商： | 20MT120UFAPBF |
Document Number: 94470
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 03-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
20MT120UFAPbF
Vishay Semiconductors
FEATURES
Ultrafast Non Punch Through (NPT) technology
Positive VCE(on) temperature coefficient
10 μs short circuit capability
HEXFRED antiparallel diodes with ultrasoft reverse
recovery
Low diode VF
Square RBSOA
Al2O3 DBC substrate
Very low stray inductance design for high speed operation
UL approved file E78996
Speed 8 kHz to 60 kHz
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Optimized for welding, UPS and SMPS applications
Rugged with ultrafast performance
Outstanding ZVS and hard switching operation
Low EMI, requires less snubbing
Excellent current sharing in parallel operation
Direct mounting to heatsink
PCB solderable terminals
Very low junction to case thermal resistance
PRODUCT SUMMARY
VCES
1200 V
IC at TC = 96 °C
20 A
VCE(on) (typical)
at IC = 20 A, 25 °C
3.29 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
VCES
1200
V
Continuous collector current
IC
TC = 96 °C
20
A
Pulsed collector current
ICM
100
Clamped inductive load current
ILM
100
Diode maximum forward current
IFM
100
Gate to emitter voltage
VGE
± 20
V
RMS isolation voltage
VISOL
Any terminal to case, t = 1 minute
2500
Maximum power dissipation (only IGBT)
PD
TC = 25 °C
240
W
TC = 100 °C
96
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