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參數(shù)資料
| 型號(hào)： | 20HS3LL- |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL 30 V - 0.0032 ヘ - 20 A SO-8 STripFET⑩III MOSFET PLUS MONOLITHIC SCHOTTKY |
| 中文描述： | N溝道30五- 0.0032ヘ- 20的SO - 8 MOSFET的STripFET⑩三整裝肖特基普樂士 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 264K |
| 代理商： | 20HS3LL- |
3/9
STS20NHS3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 8: Switching On
Symbol
Table 9: Switching Off
Symbol
Table 10: Source Drain Diode
Notes:
1. This value is rated according to Rthj-pcb
2. Pulse width limited by safe operating area
3. When mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
<
10sec
4. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15V, I
D
= 10A
R
G
= 4.7
, V
GS
= 4.5V
(see Figure 15)
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V, I
D
=20A
V
GS
= 4.5V
(see Figure 17)
27.5
7.9
8.7
37
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15V, I
D
= 10A
R
G
= 4.7
,
V
GS
= 4.5V
(see Figure 15)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
V
SD
(
4
)
Forward On Voltage
I
SD
= 10A ,V
GS
= 0
0.7
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10A, di/dt = 100A/μs
V
DD
= 25V, T
j
= 150°C
(see Figure 16)
1.9
26
25
ns
nC
A
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