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參數(shù)資料
| 型號： | 20HS3LL- |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL 30 V - 0.0032 ヘ - 20 A SO-8 STripFET⑩III MOSFET PLUS MONOLITHIC SCHOTTKY |
| 中文描述： | N溝道30五- 0.0032ヘ- 20的SO - 8 MOSFET的STripFET⑩三整裝肖特基普樂士 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 264K |
| 代理商： | 20HS3LL- |
STS20NHS3LL
2/9
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
GS
Gate- source Voltage
I
D(1)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(2)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Table 4: Thermal Data
Rthj-amb (3)
T
j
T
stg
Table 5: Avalanche Characteristics
Symbol
I
AV
Not-Repetitive Avalanche Current
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25°C, I
D
= I
AV
, V
DD
= 24V)
ELECTRICAL CHARACTERISTICS
(T
J
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Table 7: Dynamic
Parameter
Value
30
± 18
20
12.6
80
2.7
Unit
V
V
A
A
A
W
Thermal Resistance Junction-ambient Max
Maximum Operating Junction Temperature
Storage Temperature
47
-55 to 150
-55 to 150
°C/W
°C
°C
Parameter
Max Value
12.5
Unit
A
1.3
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1mA, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 24V
500
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 18V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1mA
1
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
0.0032
0.004
0.004
0.0055
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(4)
Forward Transconductance
V
DS
=15V, I
D
= 12A
30
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
3950
720
70
pF
pF
pF
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