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參數(shù)資料
| 型號： | 1PMT5925BT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.2 Watt Plastic Surface Mount POWERMITE Package |
| 中文描述： | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
| 封裝： | LEAD FREE, PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 1PMT5925BT1G |
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
1PMT5920B Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ T
A
= 25
°
C (Note 1)
Derate above 25
°
C
Thermal Resistance, JunctiontoAmbient
°
P
D
°
R
JA
500
4.0
248
°
mW
mW/
°
C
°
C/W
Thermal Resistance, JunctiontoLead (Anode)
R
Janode
°
P
D
°
R
Jcathode
35
°
C/W
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from JunctiontoTab (Cathode)
3.2
23
W
°
C/W
Operating and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR4.
2. At Tab (Cathode) temperature, T
tab
= 75
°
C
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless
otherwise noted, V
F
= 1.5 V Max. @ I
F
= 200 mAdc for all types)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
L
= 30
°
C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Device
*
Device
Marking
20B
21B
22B
23B
24B
25B
27B
29B
30B
31B
33B
34B
35B
36B
39B
41B
Zener Voltage
(Note 3)
I
ZT
(mA)
60.5
55.1
50
45.7
41.2
37.5
31.2
25
23.4
20.8
17
15.6
13.9
12.5
9.6
8.0
I
R
@ V
R
( A)
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
R
(V)
4.0
5.2
6.0
6.5
7.0
8.0
9.1
11.4
12.2
13.7
16.7
18.2
20.6
22.8
29.7
35.8
Z
ZT
@ I
ZT
(Note 4)
Z
ZK
@ I
ZK
(Note 4)
I
ZK
(mA)
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
V
Z
@ I
ZT
(Volts)
Nom
6.2
6.8
7.5
8.2
9.1
10
12
14.25
15.2
17.1
20.9
22.8
25.65
28.5
37.05
44.65
Min
5.89
6.46
7.12
7.79
8.64
9.5
11.4
Max
6.51
7.14
7.88
8.61
9.56
10.5
12.6
15.75
16.8
18.9
23.1
25.2
28.35
31.5
40.95
49.35
( )
2.0
2.5
3.0
3.5
4.0
4.5
6.5
9.0
10
12
17.5
19
23
28
45
67
( )
200
200
400
400
500
500
550
600
600
650
650
700
700
750
900
1000
1PMT5920BT1, T3,G
1PMT5921BT1, T3,G
1PMT5922BT1, T3,G
1PMT5923BT1, T3,G
1PMT5924BT1, T3,G
1PMT5925BT1, T3,G
1PMT5927BT1, T3,G
1PMT5929BT1, T3,G
1PMT5930BT1, T3,G
1PMT5931BT1, T3,G
1PMT5933BT1, T3,G
1PMT5934BT1, T3,G
1PMT5935BT1, T3,G
1PMT5936BT1, T3,G
1PMT5939BT1, T3,G
1PMT5941BT1, T3,G
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25
°
C.
4. Zener Impedance Derivation Z
and Z
are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for I
(ac) = 0.1 I
(dc) with the ac frequency = 60 Hz.
* The “G” suffix indicates PbFree package available.
15
16
18
22
24
27
30
39
47
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相關(guān)代理商/技術(shù)參數(shù) |
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| 1PMT5925BT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.2 Watt Plastic Surface Mount POWERMITE Package |
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| 1PMT5925C/TR13 | 功能描述:DIODE ZENER 10V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:10V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:4.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:12,000 |
| 1PMT5925C/TR7 | 功能描述:DIODE ZENER 10V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:10V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:4.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:3,000 |
| 1PMT5925CE3/TR13 | 功能描述:DIODE ZENER 10V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:10V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:4.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:12,000 |
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