參數(shù)資料
型號(hào): 1N5819
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Rectifier Diode(40V峰值反向電壓,1A,肖特基勢(shì)壘整流二極管)
中文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41
封裝: LEAD FREE, PLASTIC, CASE 59-10, 2 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 82K
代理商: 1N5819
1N5817, 1N5818, 1N5819
http://onsemi.com
5
100
70
5.0
30
20
10
7.0
5.0
3.0
20
7.0
10
3.0
2.0
30
1.0
40
15
5.0
3.0
2.0
0.3
0.2
0.1
40
36
12
30
20
1.0
0.5
0.05
0.03
24
16
20
8.0
4.0
28
0
32
10
20
7.0
5.0
2.0
0.2
0.3
0.5
0.7
1.0
3.0
0.9
1.0
1.1
0.1
0.07
0.05
0.03
0.02
0.6
0.5
0.4
0.3
0.2
0.7
0.1
0.8
NOTE 3. — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
T
A(A)
T
A(K)
R
S(A)
R
L(A)
R
J(A)
R
J(K)
R
L(K)
R
S(K)
P
D
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
i
Figure 7. Typical Forward Voltage
I
NUMBER OF CYCLES
Figure 8. Maximum NonRepetitive Surge Current
I
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
T
C
= 100
°
C
25
°
C
1 Cycle
T
= 70
°
C
f = 60 Hz
Surge Applied at
Rated Load Conditions
1N5817
1N5818
1N5819
T
J
= 125
°
C
100
°
C
25
°
C
Use of the above model permits junction to lead thermal re-
sistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
T
A
= Ambient Temperature
T
L
= Lead Temperature
R
S
= Thermal Resistance, Heatsink to Ambient
R
L
= Thermal Resistance, Lead to Heatsink
R
J
= Thermal Resistance, Junction to Case
P
D
= Power Dissipation
T
C
= Case Temperature
T
J
= Junction Temperature
(Subscripts A and K refer to anode and cathode sides, re-
spectively.) Values for thermal resistance components are:
R
L
= 100
°
C/W/in typically and 120
°
C/W/in maximum
R
J
= 36
°
C/W typically and 46
°
C/W maximum.
75
°
C
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