參數資料
型號: 1N5712
英文描述: Passivated General Purpose Schottky Diodes(鈍化通用型肖特基勢壘二極管)
中文描述: 鈍化通用肖特基二極管(鈍化通用型肖特基勢壘二極管)
文件頁數: 1/4頁
文件大?。?/td> 18K
代理商: 1N5712
Passivated General Purpose
Schottky Diodes
Reliability Data
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard Communications Com-
ponents Division in accordance
with the latest revision of
MIL-STD-750. Data was gathered
from the product qualification,
reliability monitor, and
engineering evaluation.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Hewlett-Packard
Communications Components
Designer’s Catalog.
Point
[1]
90% Confidence Level
[2]
J unction
Temp.
T
J
(
°
C)
200
175
150
125
100
75
MTTF
(Hours)
MTTF
(Hours)
FIT
[3]
FIT
[3]
2.7 x 10
5
1.4 x 10
6
8.9 x 10
6
7.1 x 10
7
7.4 x 10
8
1.0 x 10
10
3704.0
714.0
112.0
14.0
1.2 x 10
5
6.1 x 10
5
4.0 x 10
6
3.1 x 10
7
3.2 x 10
8
4.3 x 10
9
8333.0
1639.0
250.0
32.0
1.3
0.10
3.1
2.3
B. Failure Rate Prediction
The failure rate will depend on the
junction temperature of the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.2 eV,
and listed in the following table.
1. Life Test
A. Demonstrated Performance
Units
Tested
Total
Total
Failed
Failure Rate
1%/1K Hrs.
Test
Test Conditions
V
R
= 80% V
BR
, T
A
= 200
°
C
Device Hrs.
High Temp. Rev.
Bias (HTRB)
676
598,000
0
0
Room Temp.
Operating Life
(RTOL)
P
fm
= 250 mW, T
A
= 25
°
C
V
R
= 80% V
BR
, 60 Hz
364
364,000
0
0
High Temp.
Storage (HTS)
T
A
= 200
°
C
367
271,000
0
0
1N5711/12
5082-2800/04/05
5082-2810/11
5082-2815/17/18
5082-2826
5082-2835
5082-2080
相關PDF資料
PDF描述
1N5711 Schottky Barrier Diodes
1N5711-1 Schottky Barrier Diodes
1N5712-1 Schottky Barrier Diodes
1N6857-1 Schottky Barrier Diodes
1N6858-1 Schottky Barrier Diodes
相關代理商/技術參數
參數描述
1N5712#T25 功能描述:肖特基二極管與整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
1N5712-1 制造商:Microsemi Corporation 功能描述:Diode Schottky 20V 0.075A 2-Pin DO-35
1N5712-1E3 制造商:Microsemi Corporation 功能描述:
1N5712-1JANTX 制造商:Microsemi Corporation 功能描述:
1N5712UB 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT