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參數(shù)資料
| 型號(hào)： | 1N5712-1 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | 肖特基勢(shì)壘二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | 1N5712-1 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD LEAKAGE CURRENT
VOLTAGE
MAXIMUM REVERSE
MAXIMUM
CAPACITANCE @
V R= 0 VOLTS
f = 1.0 MH
Z
ESDS
CLASS
V
BR
@ 10
μ
A
VF @ 1 mA
VOLTS
VF @ IF
MILLIAMPS
IR@ VR
CT
VOLTS
nA
VOLTS
PICO FARADS
DSB2810
20
0.41
1.0@35
100
15
2.0
1
1N5711,-1
70
0.41
1.0@15
200
50
2.0
1
DSB5712
20
0.41
1.0@35
150
16
2.0
1
1N5712-1
20
0.41
1.0@35
150
16
2.0
1
1N6857-1
20
0.35
0.75@35
150
16
4.5
2
1N6858-1
70
0.36
0.65@15
200
50
4.5
2
NOTE:
Effective Minority Carrier Lifetime (
τ
) is 100 Pico Seconds
1N5711-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/444
1N5712-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/445
SCHOTTKY BARRIER DIODES
HERMETICALLY SEALED
METALLURGICALLY BONDED
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass case
per MIL-PRF-19500/444 and /445
DO-35 Outline
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC): 250
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (
ZOJX): 40
C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any.
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Operating Current: 5711 types
2810,5712 & 6858 types
6857 TYPE
Derating:
all types:
:33mA dc@ TL = +130°C, L = 3/8”
:75mA dc@ TL = +110°C, L = 3/8”
:75mA dc@ TL = +70°C, L = 3/8”
Derate to 0 (zero)mA@+150°C
1N5711
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
NOTICE:
Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.
Contact the factory for qualification completion dates. These two part numbers are
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They
provide a more robust mechanical design and a higher ESDS class with the only
trade-off being an increase in capacitance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6857-1 | Schottky Barrier Diodes |
| 1N6858-1 | Schottky Barrier Diodes |
| 1N6857 | Schottky Rectifier |
| 1N6858 | Schottky Rectifier |
| 1N5724 | N-P-N PLANAR SILICON PHOTOTRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5712-1E3 | 制造商:Microsemi Corporation 功能描述: |
| 1N5712-1JANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N5712UB | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT |
| 1N5712UBCA | 制造商:Microsemi Corporation 功能描述: |
| 1N5712UBCC | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT |
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