參數(shù)資料
型號: 1MB03D-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: Fuji Discrete Package IGBT
中文描述: 5 A, 1200 V, N-CHANNEL IGBT
封裝: TO-3P, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 192K
代理商: 1MB03D-120
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
Reverse Biased Safe Operating Area
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>43
C
C
Collector-Emitter Voltage : V
CE
[V]
5
10
15
20
25
0
20
40
60
80
S
S
t
SC
Gate Voltage : V
GE
[V]
0
20
40
60
80
S
S
Typical Short Circuit Capability
V
CC
=800V, R
G
=43
, T
j
=125°C
I
SC
0
1
2
3
4
0
1
2
3
4
5
6
25°C
T
j
=125°C
Forward Voltage vs. Forward Current
F
F
Forward Voltage : V
F
[V]
0
50
100
150
200
t
rr
R
r
-di
/
dt
[A/μsec]
0
100
200
300
400
500
600
0
5
10
15
20
R
r
I
rr
Reverse Recovery Characteristics vs.
-di
/
dt
I
F
=2.5A, T
j
=125°C
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
10
1
IGBT
FWD
Transient Thermal Resistance
T
Pulse Width : P
W
[sec]
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