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參數(shù)資料
| 型號(hào)： | 1MB08D-120 |
| 廠(chǎng)商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:11; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 279K |
| 代理商： | 1MB08D-120 |
Fuji Discrete Package IGBT
I
Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Minimized Internal Stray Inductance
I
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
I
Outline Drawing
I
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Symbols
V
CES
V
GES
I
C 25
I
C 100
I
C PULSE
P
C
P
C
T
j
T
stg
Ratings
1200
±
20
13
Units
V
V
DC
DC
1ms
T
c
= 25°C
T
c
=100°C
T
c
= 25°C
Collector Current
8
A
39
115
70
+150
-40
～
+150
50
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Temperature
Storage Temperature
Mounting Screw Torque
W
W
°C
°C
Nm
Electrical Characteristics
( at T
j
=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=
±
20V
V
GE
=20V I
C
=8mA
V
GE
=15V I
C
=8A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=8A
V
GE
=
±
15V
R
G
=200
V
CC
=600V
I
C
=8A
V
GE
=+15V
R
G
=20
I
F
=8A V
GE
=0V
I
F
=8A
,
V
GE
=-10V, di/dt=100A/
μ
s
Min.
Typ.
Max.
1.0
20
8.5
3.5
Units
mA
μ
A
5.5
1000
160
60
pF
1.2
0.6
1.5
0.5
Switching Time
0.16
0.11
0.30
0.5
3.0
350
Diode Forward On-Voltage
Reverse Recovery Time
V
ns
Thermal Characteristics
Items
Symbols
R
th(j-c)
R
th(j-c)
Test Conditions
IGBT
Diode
Min.
Typ.
Max.
1.08
1.78
Units
I
Equivalent Circuit
Turn-on Time
Turn-on Time
Turn-off Time
Turn-off Time
Thermal Resistance
V
μ
s
μ
s
°C/W
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