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參數(shù)資料
| 型號(hào)： | 1819-35 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 203K |
| 代理商： | 1819-35 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1819-35
35 Watt - 28 Volts, Class C
Microwave 1750 - 1850 MHz
GENERAL DESCRIPTION
The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1750-1850 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 135 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 12 A
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1750-1850 MHz
Vcb = 28 Volts
Pin = 7 Watts
As Above
F = 1850MHz, Pin = 7 W
35
7.0
40
7
10:1
Watt
Watt
dB
%
BVces
BVebo
H
Cob
θ
jc
72034
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ie = 15 mA
Vce = 5 V, Ic = 1 A
F = 1 MHz, Vcb = 28V
50
3.5
10
100
1.3
Volts
Volts
pF
C/W
o
Issue August 1996
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