
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1819AB12
12 Watts, 25 Volts, Class AB
Personal 1808 - 1880 MHz
GENERAL DESCRIPTION
The 1819AB12 is a COMMON EMITTER transistor capable of providing 12
Watts of Class AB, RF output power over the band 1808-1880 MHz. This
transistor is specifically designed for
PERSONAL COMMUNICATIONS
BASE STATION
amplifier applications. It includes Input prematching and
utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide
high reliability and supreme ruggedness. .
CASE OUTLINE
55CT, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 30 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 3.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F =1880 MHz
Vce = 25 Volts
Icq = 0.13 Amps
As Above
12
7.5
8.0
43
2.2
3:1
Watt
Watt
dB
%
BVces
BVebo
Ices
h
Cob
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.5 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
60
3.5
20
12
3
100
3.8
Volts
Volts
mA
pF
C/W
o
Initial Issue February 1995