參數(shù)資料
型號(hào): μPD29F008AL-X
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS Low Voltage Flash Memory(8M CMOS低壓閃存)
中文描述: 8 m位的CMOS低電壓快閃記憶體(800萬(wàn)的CMOS低壓閃存)
文件頁(yè)數(shù): 33/44頁(yè)
文件大?。?/td> 249K
代理商: ΜPD29F008AL-X
Preliminary Data Sheet
33
μ
PD29F008AL-X
Write Cycle Timing Chart (/WE Controlled)
Remarks 1.
This timing chart shows the last two write cycles among the write command sequence's four write
cycles, and data polling.
2.
PA : Write address
PD : Write data
/I/O7 : The output of the complement of the data written to the device.
D
OUT
: The output of the data written to the device.
Sector / Chip Erase Timing Chart
Note
SA is the sector address to be erased. In the case of chip erase, input 555H.
Address (Input)
/CE (Input)
/OE (Input)
/WE (Input)
I/O (Input / Output)
t
DS
t
DH
t
GHWL
t
CS
t
WPH
t
WHWH1
t
WC
t
AS
t
AH
t
CH
PD
/I/O7
D
OUT
t
OH
t
OE
t
CE
t
RC
555H
PA
PA
A0H
(3rd and 4th write cycle)
D
OUT
t
WP
(Data polling)
Address (Input)
/CE (Input)
/OE (Input)
/WE (Input)
I/O (Input)
V
CC
t
DS
t
DH
t
CH
t
CS
t
WPH
555H
t
WC
t
AS
t
AH
t
WP
55H
AAH
80H
AAH
55H
(10H for chip erase)
30H
2AAH
555H
555H
2AAH
SA
Note
t
GHWL
t
VCS
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